STMicroelectronics SCT1000N170
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.| Part No. | SCT1000N170 |
|---|---|
| Datasheet | SCT1000N170 Download |
| Manufacturer |  STMicroelectronics |
| Description | Silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID SCT1000N170 1700 V 1.3 Ω 7A● High speed switching performance
● Very fast and robust intrinsic body diode
● Low capacitances
● Very high operating junction temperature capability (TJ = 200 °C)
APPLICATIONS
● Auxiliary power supply for server● Switch mode power supply
DESCRIPTION
The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT1000N170 Product summary Order code SCT1000N170 Marking SCT1000N170 Package HiP247 Packing Tube DS11177 - Rev 5 - April 2021 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source volta...
