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SCT1000N170 - Silicon carbide Power MOSFET

General Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.

Key Features

  • Order code VDS RDS(on) max. ID SCT1000N170 1700 V 1.3 Ω 7A.
  • High speed switching performance.
  • Very fast and robust intrinsic body diode.
  • Low capacitances.
  • Very high operating junction temperature capability (TJ = 200 °C).

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SCT1000N170 Datasheet Silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package HiP247 3 2 1 D(2, TAB) G(1) S(3) AM01475v1_noZen Features Order code VDS RDS(on) max. ID SCT1000N170 1700 V 1.3 Ω 7A • High speed switching performance • Very fast and robust intrinsic body diode • Low capacitances • Very high operating junction temperature capability (TJ = 200 °C) Applications • Auxiliary power supply for server • Switch mode power supply Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.