Datasheet Summary
Automotive-grade silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package
Features
Order code
RDS(on) max.
1700 V
1.3 Ω
7A
HiP247
3 2 1
- AEC-Q101 rev. C qualified
- Very fast and robust intrinsic body diode
- Low capacitances
- Very high operating junction temperature capability (TJ = 200 °C)
D(2, TAB)
Applications
- Main inverter (electric traction)
- DC/DC converter for EV/HEV
- On board charger (OBC)
G(1) S(3)
AM01475v1_noZen
Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit...