Order code VDS RDS(on) max. ID SCT1000N170AG 1700 V 1.3 Ω 7A HiP247 3 2 1
* AEC-Q101 rev. C qualified
* Very fast and robust intrinsic body diode
*.

* Main inverter (electric traction)
* DC/DC converter for EV/HEV
* On board charger (OBC) G(1) S(3) AM0147.

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The.

SCT1000N170

SCT10N120

SCT10N120AG

SCT12A0

SCT12N60FD

SCT12N60P

SCT1527

SCT1555

SCT16N60FD

SCT16N60P

SCT-013-000

SCT-013-000V

SCT-013-005