SCT10N120AG Datasheet | STMicroelectronics

Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package Features HiP247 3 2 1 D(2, TAB) - AEC-Q101 qualified - Very tight variation of on-resistance vs. temperature - Very high operating temperature capability (TJ = 200 °C) - Very fast and robust intrinsic body diode - Low capacitance Applications - Motor drives - EV chargers - High voltage DC-DC converters - Switch mode power supplies G(1) S(3) AM01475v1_noZen Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good...