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SCT10N120AG Datasheet Automotive-grade Silicon Carbide Power MOSFET

Manufacturer: STMicroelectronics

Overview: SCT10N120AG Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ.

General Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.

The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industrystandard outline with significantly improved thermal capability.

Key Features

  • HiP247 3 2 1 D(2, TAB).
  • AEC-Q101 qualified.
  • Very tight variation of on-resistance vs. temperature.
  • Very high operating temperature capability (TJ = 200 °C).
  • Very fast and robust intrinsic body diode.
  • Low capacitance.

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