Datasheet Details
| Part number | SCT20N120 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 533.62 KB |
| Description | Silicon carbide Power MOSFET |
| Datasheet | SCT20N120-STMicroelectronics.pdf |
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Overview: SCT20N120 Datasheet Silicon carbide Power MOSFET 1200 V, 169 mΩ typ.
| Part number | SCT20N120 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 533.62 KB |
| Description | Silicon carbide Power MOSFET |
| Datasheet | SCT20N120-STMicroelectronics.pdf |
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|
|
AM01475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.
This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability.
Compare SCT20N120 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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