• Part: SCT20N120
  • Description: Silicon carbide Power MOSFET
  • Manufacturer: STMicroelectronics
  • Size: 533.62 KB
Download SCT20N120 Datasheet PDF
SCT20N120 datasheet preview
SCT20N120 page 2
Page 2
SCT20N120 page 3
Page 3

SCT20N120 Key Features

  • Very low RDS(on) over the entire temperature range
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Very fast and robust intrinsic body diode
  • Low capacitance

Related STMicroelectronics Datasheets

Part Number Description
SCT20N120AG Automotive-grade silicon carbide Power MOSFET
SCT20N170AG Automotive-grade silicon carbide Power MOSFET
SCT011H75G3AG Automotive-grade silicon carbide Power MOSFET
SCT012H90G3AG Automotive-grade silicon carbide Power MOSFET
SCT012W90G3AG Automotive-grade silicon carbide Power MOSFET