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SCT20N170AG Datasheet Automotive-grade Silicon Carbide Power MOSFET

Manufacturer: STMicroelectronics

Overview: SCT20N170AG Datasheet Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mΩ typ.

General Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.

The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability.

Key Features

  • Order code SCT20N170AG VDS 1700 V RDS(on) typ. 64 mΩ ID 43 A HiP247 3 2 1.
  • AEC-Q101 rev. C qualified.
  • Very fast and robust intrinsic body diode.
  • Low capacitances.
  • Very high operating junction temperature capability (TJ = 200 °C) D(2, TAB).

SCT20N170AG Distributor