SCT50N120 mosfet equivalent, silicon carbide power mosfet.
* Very tight variation of on-resistance vs. temperature
* Very high operating junction temperature capability (TJ = 200 °C)
* Very fast and robust intrinsic b.
Figure 1: Internal schematic diagram
* Solar inverters, UPS
* Motor drives
* High voltage DC-DC converters.
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The.
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