Datasheet Summary
Automotive-grade silicon carbide Power MOSFET 1200 V, 9.3 mΩ typ., 170 A in a STPAK package
4 1 4
STPAK
Drain(4)
Gate(3)
Driver source(2)
Power source(1)
Features
Order code
VDS 1200 V
RDS(on) typ. 9.3 mΩ
ID 170 A
- AEC-Q101 qualified
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Very fast and robust intrinsic body diode
- Very high operating junction temperature capability (TJ = 200 °C)
- Source sensing pin for increased efficiency
Application
- Main inverter (electric traction)
Description
NG3DS2PS1D4
This silicon carbide Power MOSFET device has been developed using...