SCTHS300N75G3AG Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.
SCTHS300N75G3AG Key Features
- AEC-Q101 qualified
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Very fast and robust intrinsic body diode
- Source sensing pin for increased efficiency
- Main inverter (electric traction)
- October 2022 For further information contact your local STMicroelectronics sales office