STMicroelectronics SCTHS300N75G3AG
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.| Part No. | SCTHS300N75G3AG |
|---|---|
| Datasheet | SCTHS300N75G3AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code 23 SCTHS300N75G3AG VDS 750 V RDS(on) typ. 6.5 mΩ ID 300 A● AEC-Q101 qualified 1
● Very low RDS(on) over the entire temperature range
● High speed switching performances
● Very fast and robust intrinsic body diode
● Source sensing pin for increased efficiency Application
● Main inverter (electric traction) NG3DS2PS1D4
DESCRIPTION
Product status link SCTHS300N75G3AG Product summary Order code SCTHS300N75G3AG Marking SC300N75G3AG Package STPAK Packing Tray DS14051 - Rev 2 - October 2022 For further information contact your local STMicroelectronics sales office. SCTHS300N75G3AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operating values) Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C VISO Insulation withstand voltage applied between each pin and the heat sink plate (DC voltage, t = 1 s) Tstg Storage temperature range TJ Operating junction temperature range 1.
