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SCTHS300N75G3AG - Automotive-grade silicon carbide Power MOSFET

General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Key Features

  • Order code 23 SCTHS300N75G3AG VDS 750 V RDS(on) typ. 6.5 mΩ ID 300 A.
  • AEC-Q101 qualified 1.
  • Very low RDS(on) over the entire temperature range.
  • High speed switching performances.
  • Very fast and robust intrinsic body diode.
  • Source sensing pin for increased efficiency.

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SCTHS300N75G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 750 V, 6.5 mΩ typ., 300 A in a STPAK package 4 1 4 32 STPAK Drain(4) Gate(3) Driver source(2) Power source(1) Features Order code 23 SCTHS300N75G3AG VDS 750 V RDS(on) typ. 6.5 mΩ ID 300 A • AEC-Q101 qualified 1 • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Application • Main inverter (electric traction) NG3DS2PS1D4 Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.