SCTHS200N120G3AG Overview
NG3DS2PS1D4 This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.
SCTHS200N120G3AG Key Features
- AEC-Q101 qualified
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Very fast and robust intrinsic body diode
- Very high operating junction temperature capability (TJ = 200 °C)
- Source sensing pin for increased efficiency
- Main inverter (electric traction)
- June 2024 For further information contact your local STMicroelectronics sales office