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SCTHS250N65G2G - Automotive-grade silicon carbide Power MOSFET

Product Overview

STMicroelectronics

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SCTHS250N65G2G Automotive-grade silicon carbide Power MOSFET by STMicroelectronics - Datasheet Preview — Datasheet preview – SCTHS250N65G2G

Datasheet Details

Part number	SCTHS250N65G2G
Manufacturer	STMicroelectronics
File Size	260.34 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTHS250N65G2G Datasheet
Additional preview pages of the SCTHS250N65G2G datasheet.

Product details

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code 23 SCTHS250N65G2G VDS 650 V RDS(on) typ. 8.0 mΩ ID 250 A.
AEC-Q101 qualified 1.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Source sensing pin for increased efficiency.

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Published: Jun 26, 2023 |