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SCTHS250N65G2G Datasheet Automotive-grade Silicon Carbide Power MOSFET

Manufacturer: STMicroelectronics

Overview: SCTHS250N65G2G Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 8.0 mΩ typ.

General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

The device

Key Features

  • Order code 23 SCTHS250N65G2G VDS 650 V RDS(on) typ. 8.0 mΩ ID 250 A.
  • AEC-Q101 qualified 1.
  • Very fast and robust intrinsic body diode.
  • Extremely low gate charge and input capacitance.
  • Source sensing pin for increased efficiency.

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