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SCTHS300N75G3AG Datasheet Automotive-grade Silicon Carbide Power MOSFET

Manufacturer: STMicroelectronics

Overview: SCTHS300N75G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 750 V, 6.5 mΩ typ.

General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

The device

Key Features

  • Order code 23 SCTHS300N75G3AG VDS 750 V RDS(on) typ. 6.5 mΩ ID 300 A.
  • AEC-Q101 qualified 1.
  • Very low RDS(on) over the entire temperature range.
  • High speed switching performances.
  • Very fast and robust intrinsic body diode.
  • Source sensing pin for increased efficiency.

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SCTHS300N75G3AG Distributor