Datasheet Summary
Automotive-grade silicon carbide Power MOSFET 750 V, 6.5 mΩ typ., 300 A in a STPAK package
4 1 4
STPAK
Drain(4)
Gate(3)
Driver source(2)
Power source(1)
Features
Order code
VDS 750 V
RDS(on) typ. 6.5 mΩ
ID 300 A
- AEC-Q101 qualified
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Very fast and robust intrinsic body diode
- Source sensing pin for increased efficiency
Application
- Main inverter (electric traction)
NG3DS2PS1D4
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device...