• Part: SCTWA70N120G2V-4
  • Description: Silicon carbide Power MOSFET
  • Manufacturer: STMicroelectronics
  • Size: 213.97 KB
Download SCTWA70N120G2V-4 Datasheet PDF
SCTWA70N120G2V-4 datasheet preview
SCTWA70N120G2V-4 page 2
Page 2
SCTWA70N120G2V-4 page 3
Page 3

SCTWA70N120G2V-4 Key Features

  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Source sensing pin for increased efficiency

Related STMicroelectronics Datasheets

Part Number Description
SCTWA70N120G2V Silicon carbide Power MOSFET
SCTWA35N65G2V4AG Automotive-grade silicon carbide Power MOSFET
SCTWA35N65G2VAG Automotive-grade silicon carbide Power MOSFET
SCTWA40N120G2AG Automotive-grade silicon carbide Power MOSFET
SCTWA40N120G2V Silicon carbide Power MOSFET