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STB12NM60N Key Features

  • 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
  • Switching application
  • STF12NM60N
  • STP12NM60N
  • STW12NM60N
  • 3 Electrical characteristics
  • 10 Packaging mechanical data
  • 16 Revision history
  • STF12NM60N
  • STP12NM60N

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STB12N60DM2AG N-channel Power MOSFET

STB12NM60N Description

This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.