STB18NF30 mosfet equivalent, n-channel power mosfet.
TAB
3 1 D²PAK
Figure 1. Internal schematic diagram
' RU7$%
*
6
Order code STB18NF30
VDSS 330 V
RDS(on) max. 180 mΩ
ID 18 A
* Designed for automotive a.
and AEC-Q101 qualified
* 100% avalanche tested
* 175 °C junction temperature
Applications
* Switching appli.
This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficien.
Image gallery
Download