STB21NM60N-1 Description
ucThis series of devices implements the second dgeneration of MDmesh™ technology. This rorevolutionary Power MOSFET associates a new Pvertical structure to the pany’s strip layout to teyield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most Obsoledemanding high efficiency converters.
STB21NM60N-1 Key Features
- O- Switching