STB24N60DM2 Datasheet N-Channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STB24N60DM2, STP24N60DM2, STW24N60DM2 N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus™ low Qg 2 Power MOSFETs in D PAK, TO-220 and TO-247 packages Datasheet − production data TAB 2 3 1 D2PAK TAB 3 2 1 TO-220 3 2 1 TO-247 Figure 1.

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STB24N60DM2 n-channel power mosfet by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	STB24N60DM2
Manufacturer	STMicroelectronics
File Size	668.20 KB
Description	N-Channel Power MOSFET
Download	STB24N60DM2 Download (PDF)

General Description

These FDmesh II Plus™ low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ S(3) AM01476v1 technology: MDmesh II Plus™ low Qg.

These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest

Key Features

Order codes STB24N60DM2 STP24N60DM2 STW24N60DM2 VDS @ TJmax 650 V RDS(on) max ID 0.20 Ω 18 A.
Extremely low gate charge and input capacitance.
Lower RDS(on) x area vs previous generation.
Low gate input resistance.
100% avalanche tested.
Zener-protected.
Extremely high dv/dt and avalanche capabilities.

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