Datasheet Details
| Part number | STB4NC50 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 204.09 KB |
| Description | N-CHANNEL MOSFET |
| Download | STB4NC50 Download (PDF) |
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| Part number | STB4NC50 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 204.09 KB |
| Description | N-CHANNEL MOSFET |
| Download | STB4NC50 Download (PDF) |
|
|
|
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.
The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVERS s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
N-CHANNEL 500V - 2.2Ω - 4A D2PAK PowerMesh™II MOSFET TYPE STB4NC50 www.DataSheet4U.com s TYPICAL s s s s STB4NC50 VDSS 500V RDS(on) < 2.7Ω ID 4A RDS(on) = 2.
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