Datasheet Details
| Part number | STB4NC60 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 380.80 KB |
| Description | N-CHANNEL MOSFET |
| Download | STB4NC60 Download (PDF) |
|
|
| Part number | STB4NC60 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 380.80 KB |
| Description | N-CHANNEL MOSFET |
| Download | STB4NC60 Download (PDF) |
|
|
|
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.
The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVERS s D2PAK INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
N-CHANNEL 600V - 1.8Ω - 4.2A D2PAK PowerMesh™II MOSFET TYPE STB4NC60 www.DataSheet4U.com s TYPICAL s s s s STB4NC60 VDSS 600V RDS(on) < 2.2Ω ID 4.2A RDS(on) = 1.
| Part Number | Description |
|---|---|
| STB4NC60-1 | N-CHANNEL MOSFET |
| STB4NC60A-1 | N-CHANNEL MOSFET |
| STB4NC50 | N-CHANNEL MOSFET |
| STB4NC80Z | N-CHANNEL MOSFET |
| STB4NC80Z-1 | N-CHANNEL MOSFET |
| STB4NB50 | N-CHANNEL MOSFET |
| STB4NB80 | N-CHANNEL MOSFET |
| STB4NK60Z-1 | N-CHANNEL Power MOSFET |
| STB4NK60ZT4 | N-CHANNEL Power MOSFET |
| STB40N20 | Low gate charge STripFET Power MOSFET |