STB4NC80Z Datasheet - STMicroelectronics

N-CHANNEL MOSFET

STB4NC80Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

STB4NC80Z General Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variet.

STB4NC80Z Datasheet (445.83 KB)

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Datasheet Details

Part number:

STB4NC80Z

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STMicroelectronics ↗

File Size:

445.83 KB

Description:

N-channel mosfet.
STP4NC80Z - STP4NC80ZFP STB4NC80Z - STB4NC80Z-1 N-CHANNEL 800V - 2.4Ω - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET TYPE STP4NC80Z/F.

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STB4NC80Z N-CHANNEL MOSFET STMicroelectronics

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STB4NC80Z Features

STB4NC80Z General Description

Datasheet Details

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STB4NC80Z Distributor