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STD3NK100Z
Datasheet
N-channel 1000 V, 5.4 Ω typ., 2.5 A SuperMESH Power MOSFET in a DPAK package
TAB 23 1
DPAK D(2, TAB)
G(1)
S(3)
Features
Order code
VDS
STD3NK100Z
1000 V
• 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected
RDS(on) max. 6.0 Ω
ID 2.5 A
Applications
• Switching applications
Description
AM01476v1_tab
This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
STD3NK100Z Datasheet
