Download the STD8NM60N-1 datasheet PDF.
This datasheet also covers the STD8NM60N variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
This series of devices implements second generation MDmesh™ technology.
This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
Key Features
www. DataSheet4U. com
Type
VDSS (@Tjmax) 650 V 650 V 650 V 650 V
RDS(on) max.
Note: The manufacturer provides a single datasheet file (STD8NM60N_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for STD8NM60N-1 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
STD8NM60N-1. For precise diagrams, and layout, please refer to the original PDF.
STD8NM60N - STD8NM60N-1 STF8NM60N - STP8NM60N N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET Features www.DataShe...
View more extracted text
PAK - DPAK second generation MDmesh™ Power MOSFET Features www.DataSheet4U.com Type VDSS (@Tjmax) 650 V 650 V 650 V 650 V RDS(on) max <0.65 Ω <0.65 Ω <0.65 Ω <0.65 Ω ID 3 3 2 1 1 2 STD8NM60N STD8NM60N-1 STF8NM60N STP8NM60N 7A 7A 7 A(1) 7A IPAK TO-220 1. Limited only by maximum temperature allowed ■ ■ ■ 3 1 1 3 2 100% avalanche tested Low input capacitance and gate charge Low gate input resistance DPAK TO-220FP Application ■ Figure 1. Internal schematic diagram Switching applications Description This series of devices implements second generation MDmesh™ technology.
STD8NM60N-1 Datasheet
