Order codes ) STP20NM65N t(s STF20NM65N VDSS @Tjmax RDS(on) max. 710 V 0.270 Ω ID 15 A uc
* 100 % avalanche tested rod
* Low input capacitance and gate char.

Ob Description ) - These devices are N-channel Power MOSFETs t(s realized using the second generation MDmesh™ c technol.

) - These devices are N-channel Power MOSFETs t(s realized using the second generation MDmesh™ c technology. This revolutionary Power MOSFET u associates a new vertical structure to the d company’s strip layout to yield one of the world’s ro lowest o.

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