STF43N60DM2 Datasheet | STMicroelectronics

Features Order code VDS @ TJ max. RDS(on) max. 650 V 0.093 Ω - Fast-recovery body diode - Extremely low gate charge and input capacitance - Low on-resistance - 100% avalanche tested - Extremely high dv/dt ruggedness - Zener-protected ID 34 A PTOT 40 W Applications G(1) - Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast S(3) AM15572v1_no_tab recovery diode series. It offers very low recovery charge (Qrr) and time (trr) bined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status links STF43N60DM2 Product summary Order code Marking 43N60DM2 Package TO-220FP Packing Tube DS10532 - Rev 3 - August 2019 For further information contact your local STMicroelectronics sales office. .st. Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID (1) Drain current (continuous) at Tcase = 25 °C Drain current (continuous) at Tcase= 100 °C IDM...