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STF43N60DM2 Datasheet

N-channel Power MOSFET

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STF43N60DM2
Datasheet
N-channel 600 V, 0.085 Ω typ., 34 A MDmesh DM2
Power MOSFET in a TO-220FP package
23
1
TO-220FP
D(2)
Features
Order code
VDS @ TJ max. RDS(on) max.
STF43N60DM2
650 V
0.093 Ω
• Fast-recovery body diode
• Extremely low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
ID
34 A
PTOT
40 W
Applications
G(1) • Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-
S(3) AM15572v1_no_tab recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined
with low RDS(on), rendering it suitable for the most demanding high-efficiency
converters and ideal for bridge topologies and ZVS phase-shift converters.
Product status links
STF43N60DM2
Product summary
Order code
STF43N60DM2
Marking
43N60DM2
Package
TO-220FP
Packing
Tube
DS10532 - Rev 3 - August 2019
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STF43N60DM2 Datasheet

N-channel Power MOSFET

No Preview Available !

STF43N60DM2
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
ID (1)
Drain current (continuous) at Tcase = 25 °C
Drain current (continuous) at Tcase= 100 °C
IDM (2)
Drain current (pulsed)
PTOT
Total power dissipation at Tcase = 25 °C
dv/dt (3)
Peak diode recovery voltage slope
dv/dt (4)
MOSFET dv/dt ruggedness
VISO
Insulation withstand voltage (RMS) from all three leads to external heat
sink (t = 1 s; TC = 25 °C)
Tstg Storage temperature range
Tj Operating junction temperature range
1. Limited by maximum junction temperature.
2. Pulse width is limited by safe operating area.
3. ISD ≤ 34, di/dt ≤ 900 A/µs, VDS(peak) < V(BR)DSS, VDD = 400 V
4. VDS ≤ 480 V
Symbol
Rthj-case
Rthj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
±25
34
21
136
40
50
50
2.5
–55 to 150
Value
3.13
62.5
Unit
V
A
W
V/ns
kV
°C
°C
Unit
°C/W
Symbol
IAR
EAR
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
6
800
Unit
A
mJ
DS10532 - Rev 3
page 2/12


Part Number STF43N60DM2
Description N-channel Power MOSFET
Maker STMicroelectronics
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