STFI11N60M2-EP mosfet equivalent, n-channel power mosfet.
1 23 I 2 PAKFP (TO-281)
D(2)
Order code
VDS
RDS(on) max.
STFI11N60M2-EP
600 V
0.595 Ω
* Extremely low gate charge
* Excellent output capacitance (COSS) pr.
* Switching applications
G(1)
Description
This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanc.
This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an S(3) AM15572v1_no_tab improved vertical structure, the device exhibits low on-resistance, optimized switching .
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