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STFI11N65M2 - N-channel Power MOSFETs

Download the STFI11N65M2 datasheet PDF. This datasheet also covers the STF11N65M2 variant, as both devices belong to the same n-channel power mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.

Key Features

  • 3 2 1 TO-220FP 1 23 I2PAKFP Figure 1. Internal schematic diagram '  .
  •  6  AM01476v1 Order codes STF11N65M2 STFI11N65M2 VDS 650 V RDS(on) max ID 0.67 Ω 7A.
  • Extremely low gate charge.
  • Lower RDS(on) x area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STF11N65M2-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STF11N65M2, STFI11N65M2 N-channel 650 V, 0.6 Ω typ., 7 A MDmesh II Plus™ low Qg 2 Power MOSFETs in TO-220FP and I PAKFP packages Datasheet - preliminary data Features 3 2 1 TO-220FP 1 23 I2PAKFP Figure 1. Internal schematic diagram '  *  6  AM01476v1 Order codes STF11N65M2 STFI11N65M2 VDS 650 V RDS(on) max ID 0.67 Ω 7A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.