N-channel 650 V, 0.6 Ω typ., 7 A MDmesh™ M2
Power MOSFETs in TO-220FP and I²PAKFP packages
Datasheet - production data
Figure 1: Internal schematic diagram
VDS RDS(on) max. ID PTOT
7 A 25 W
Extremely low gate charge
Excellent output capacitance (COSS) profile
100% avalanche tested
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, these devices exhibit low on-resistance
and optimized switching characteristics,
rendering them suitable for the most demanding
high efficiency converters.
Table 1: Device summary
DocID025806 Rev 2
This is information on a product in full production.