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STFI6N62K3 - N-channel Power MOSFET

Download the STFI6N62K3 datasheet PDF. This datasheet also covers the STF6N62K3 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

Key Features

  • TAB Order codes STF6N62K3 STFI6N62K3 STI6N62K3 STP6N62K3 STU6N62K3 VDSS RDS(on) max. ID 620 V < 1.2 Ω 5.5 A PTOT 30 W 30 W 90 W 90 W 90 W.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STF6N62K3-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 N-channel 620 V, 0.95 Ω typ., 5.5 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220, IPAK packages Datasheet − production data Features TAB Order codes STF6N62K3 STFI6N62K3 STI6N62K3 STP6N62K3 STU6N62K3 VDSS RDS(on) max. ID 620 V < 1.2 Ω 5.5 A PTOT 30 W 30 W 90 W 90 W 90 W ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected Applications ■ Switching applications 3 2 1 TO-220FP TAB 3 2 1 TO-220 123 I²PAK 1 23 I²PAK FP TAB IPAK 3 2 1 Figure 1.