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STFI6N80K5 - N-channel Power MOSFET

Download the STFI6N80K5 datasheet PDF. This datasheet also covers the STF6N80K5 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • Order code STF6N80K5 STFI6N80K5 VDS RDS(on)max ID 800 V 1.6 Ω 4.5 A PTOT 25 W.
  • Industry’s lowest RDS(on).
  • Industry’s best figure of merit (FoM).
  • Ultra low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STF6N80K5-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

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STFI6N62K3 N-channel Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STF6N80K5, STFI6N80K5 N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh™ K5 Power MOSFETs in TO-220FP and I²PAKFP packages Datasheet - production data 3 2 1 TO-220FP 1 23 I 2 PAKFP Figure 1. Internal schematic diagram D(2) Features Order code STF6N80K5 STFI6N80K5 VDS RDS(on)max ID 800 V 1.6 Ω 4.5 A PTOT 25 W • Industry’s lowest RDS(on) • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications G(1) S(3) AM01476v1 Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.