STGO30H60DLLFBAG
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
Key Features
- AEC-Q101 qualified
- Maximum junction temperature: TJ = 175 °C
- Logic level gate drive
- High-speed switching series
- Minimized tail current
- VCE(sat) = 1.6 V (typ.) @ IC = 30 A
- Low VF soft-recovery co-packaged diode
- Tight parameter distribution
- Safer paralleling
- Low G1CTABE2345678
