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STGO30H60DLLFBAG - IGBT

General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Key Features

  • TAB 8 8 1 TO-LL type B C(TAB) G(1) E(2, 3, 4, 5, 6, 7, 8) 1.
  • AEC-Q101 qualified.
  • Maximum junction temperature: TJ = 175 °C.
  • Logic level gate drive.
  • High-speed switching series.
  • Minimized tail current.
  • VCE(sat) = 1.6 V (typ. ) @ IC = 30 A.
  • Low VF soft-recovery co-packaged diode.
  • Tight parameter distribution.
  • Safer paralleling.
  • Low thermal resistance G1CTABE2345678.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGO30H60DLLFBAG Datasheet Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO‑LL package TAB Features TAB 8 8 1 TO-LL type B C(TAB) G(1) E(2, 3, 4, 5, 6, 7, 8) 1 • AEC-Q101 qualified • Maximum junction temperature: TJ = 175 °C • Logic level gate drive • High-speed switching series • Minimized tail current • VCE(sat) = 1.6 V (typ.) @ IC = 30 A • Low VF soft-recovery co-packaged diode • Tight parameter distribution • Safer paralleling • Low thermal resistance G1CTABE2345678 Applications • Automotive injection Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.