STMicroelectronics STGSB200M65DF2AG
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.| Part No. | STGSB200M65DF2AG |
|---|---|
| Datasheet | STGSB200M65DF2AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade 650V 200A low-loss IGBT |
| Buy | Stock & Price |
FEATURES
● AEC-Q101 qualified● 6 μs of minimum short-circuit withstand time
● VCE(sat) = 1.65 V (typ.) @ IC = 200 A
● Tight parameter distribution
● Positive VCE(sat) temperature coefficient
● Low thermal resistance
● Maximum junction temperature: TJ = 175 °C
● Dice on direct bond copper (DBC) substrate
● Isolation rating of 3400 Vrms/min
● UL recognition: UL 1557 file E81734
APPLICATIONS
● Traction inverterDESCRIPTION
Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Thanks to the DBC substrate, the ACEPACK SMIT surface mounting power package offers a low thermal resistance coupled with a electrical isolated top side thermal pad. Product status link STGSB200M65DF2AG Product summary Order code STGSB200M65DF2AG Marking GSB200M65DF2AG Package ACEPACK SMIT Packing Tape and reel DS13367 - Rev 3 - November 2021 For further information contact your local STMicroelectronics sales office. STGSB200M65DF2AG Electrical ratings 1 Electrical ratings Table 1.
