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STGSB200M65DF2AG - IGBT

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STMicroelectronics

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STGSB200M65DF2AG IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – STGSB200M65DF2AG

Datasheet Details

Part number	STGSB200M65DF2AG
Manufacturer	STMicroelectronics
File Size	567.46 KB
Description	IGBT
Datasheet	STGSB200M65DF2AG Datasheet
Additional preview pages of the STGSB200M65DF2AG datasheet.

Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

AEC-Q101 qualified.
6 μs of minimum short-circuit withstand time.
VCE(sat) = 1.65 V (typ. ) @ IC = 200 A.
Tight parameter distribution.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Maximum junction temperature: TJ = 175 °C.
Dice on direct bond copper (DBC) substrate.
Isolation rating of 3400 Vrms/min.
UL recognition: UL 1557 file E81734.

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Published: Mar 1, 2023 |