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STGSB200M65DF2AG Datasheet, STMicroelectronics

STGSB200M65DF2AG igbt equivalent, igbt.

STGSB200M65DF2AG Avg. rating / M : 1.0 rating-13

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STGSB200M65DF2AG Datasheet

Features and benefits


* AEC-Q101 qualified
* 6 μs of minimum short-circuit withstand time
* VCE(sat) = 1.65 V (typ.) @ IC = 200 A
* Tight parameter distribution
* Positive .

Application


* Traction inverter Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop.

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