STGST200G65DFAG Datasheet Automotive-grade Trench Gate Field-stop IGBT

Manufacturer: STMicroelectronics

Overview: STGST200G65DFAG, STGST200G65DTAG Datasheet Automotive-grade trench gate field-stop IGBT 650 V, 200 A in a STPAK package.

Datasheet Details

Part number	STGST200G65DFAG
Manufacturer	STMicroelectronics
File Size	770.75 KB
Description	Automotive-grade trench gate field-stop IGBT
Datasheet	STGST200G65DFAG-STMicroelectronics.pdf

General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

This device represents an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss are essential.

Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Key Features

1 4 23 32 1 STPAK C(4) G(3) E(1, 2) NG3C4E12.
AEC-Q101 qualified.
VCE(sat) = 1.52 V (typ. ) @ IC = 200 A.
Positive VCE(sat) temperature coefficient.
Tight parameter distribution.
Low thermal resistance.
Very fast and soft recovery antiparallel diode.

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