• Part: STGST200G65DFAG
  • Description: Automotive-grade trench gate field-stop IGBT
  • Manufacturer: STMicroelectronics
  • Size: 770.75 KB
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STMicroelectronics
STGST200G65DFAG
STGST200G65DFAG is Automotive-grade trench gate field-stop IGBT manufactured by STMicroelectronics.
STGST200G65DFAG, STGST200G65DTAG Automotive-grade trench gate field-stop IGBT 650 V, 200 A in a STPAK package Features STPAK C(4) G(3) E(1, 2) NG3C4E12 - AEC-Q101 qualified - VCE(sat) = 1.52 V (typ.) @ IC = 200 A - Positive VCE(sat) temperature coefficient - Tight parameter distribution - Low thermal resistance - Very fast and soft recovery antiparallel diode Applications - Main inverter (electric traction) Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. This device represents an optimum promise in performance to maximize the efficiency of inverter systems where low-loss are...