STMicroelectronics STGST200G65DFAG
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. This device represents an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss are essential.| Part No. | STGST200G65DFAG |
|---|---|
| Datasheet | STGST200G65DFAG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade 650V 200A IGBT |
| Buy | Stock & Price |
FEATURES
1 4 23 32 1 STPAK C(4) G(3) E(1, 2) NG3C4E12● AEC-Q101 qualified
● VCE(sat) = 1.52 V (typ.) @ IC = 200 A
● Positive VCE(sat) temperature coefficient
● Tight parameter distribution
● Low thermal resistance
● Very fast and soft recovery antiparallel diode
APPLICATIONS
● Main inverter (electric traction)DESCRIPTION
Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Product status link STGST200G65DFAG STGST200G65DTAG Product summary Order code STGST200G65DFAG Marking G200G65DFAG Package STPAK longer pins Packing Tray Order code STGST200G65DTAG Marking G200G65DTAG Package STPAK longer pins Packing Tube DS13887 - Rev 5 - June 2025 For further information, contact your local STMicroelectronics sales office. STGST200G65DFAG, STGST200G65DTAG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) IC (1) Continuous collector curren...
