STGSH80HB65DAG Description
This device bines two IGBTs and diodes in half-bridge topology mounted on a very pact and rugged easily surface-mounted package. The device is part of the HB series IGBTs, which is optimized both in conduction and switching losses for soft mutation. A freewheeling diode with a low drop forward voltage is included in every switch.
STGSH80HB65DAG Key Features
- AQG 324 qualified
- High-speed switching series
- Maximum junction temperature: TJ = 175 °C
- Low VCE(sat) = 1.7 V (typ.) @ IC = 80 A
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance thanks to DBC substrate
- Positive temperature VCE(sat) coefficient
- Soft and very fast recovery antiparallel diode
- Isolation rating of 3.4 kVrms/min
STGSH80HB65DAG Applications
- DC/DC converter for EV/HEV