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STGSB200M65DF2AG - IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.

Features

  • AEC-Q101 qualified.
  • 6 μs of minimum short-circuit withstand time.
  • VCE(sat) = 1.65 V (typ. ) @ IC = 200 A.
  • Tight parameter distribution.
  • Positive VCE(sat) temperature coefficient.
  • Low thermal resistance.
  • Maximum junction temperature: TJ = 175 °C.
  • Dice on direct bond copper (DBC) substrate.
  • Isolation rating of 3400 Vrms/min.
  • UL recognition: UL 1557 file E81734.

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Full PDF Text Transcription

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STGSB200M65DF2AG Datasheet Automotive-grade trench gate field-stop, 650 V, 200 A, low-loss M series IGBT in an ACEPACK SMIT package 9 8 7 7 8 9 4 6 1 3 6 4 3 1 ACEPACK SMIT C(7,8,9) G(6) K(5) E(1,2,3,4) ACEPACK_SMIT_IGBT Features • AEC-Q101 qualified • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.65 V (typ.) @ IC = 200 A • Tight parameter distribution • Positive VCE(sat) temperature coefficient • Low thermal resistance • Maximum junction temperature: TJ = 175 °C • Dice on direct bond copper (DBC) substrate • Isolation rating of 3400 Vrms/min • UL recognition: UL 1557 file E81734 Applications • Traction inverter Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
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