• Part: STGSB200M65DF2AG
  • Description: IGBT
  • Manufacturer: STMicroelectronics
  • Size: 567.46 KB
Download STGSB200M65DF2AG Datasheet PDF
STMicroelectronics
STGSB200M65DF2AG
STGSB200M65DF2AG is IGBT manufactured by STMicroelectronics.
Automotive-grade trench gate field-stop, 650 V, 200 A, low-loss M series IGBT in an ACEPACK SMIT package 9 8 7 7 8 4 6 1 3 6 4 3 1 ACEPACK SMIT C(7,8,9) G(6) K(5) E(1,2,3,4) ACEPACK_SMIT_IGBT Features - AEC-Q101 qualified - 6 μs of minimum short-circuit withstand time - VCE(sat) = 1.65 V (typ.) @ IC = 200 A - Tight parameter distribution - Positive VCE(sat) temperature coefficient - Low thermal resistance - Maximum junction temperature: TJ = 175 °C - Dice on direct bond copper (DBC) substrate - Isolation rating of 3400 Vrms/min - UL recognition: UL 1557 file E81734 Applications - Traction inverter Description This device is an IGBT developed using an...