STGSB200M65DF2AG Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling...
STGSB200M65DF2AG Key Features
- AEC-Q101 qualified
- 6 μs of minimum short-circuit withstand time
- VCE(sat) = 1.65 V (typ.) @ IC = 200 A
- Tight parameter distribution
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Maximum junction temperature: TJ = 175 °C
- Dice on direct bond copper (DBC) substrate
- Isolation rating of 3400 Vrms/min
- UL recognition: UL 1557 file E81734