Datasheet Details
| Part number | STGSB200M65DF2AG |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 567.46 KB |
| Description | IGBT |
| Datasheet | STGSB200M65DF2AG-STMicroelectronics.pdf |
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Overview: STGSB200M65DF2AG Datasheet Automotive-grade trench gate field-stop, 650 V, 200 A, low-loss M series IGBT in an ACEPACK SMIT package 9 8 7 7 8 9 4 6 1 3 6 4 3 1 ACEPACK SMIT C(7,8,9) G(6) K(5) E(1,2,3,4).
| Part number | STGSB200M65DF2AG |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 567.46 KB |
| Description | IGBT |
| Datasheet | STGSB200M65DF2AG-STMicroelectronics.pdf |
|
|
|
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
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