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STGST200G65DTAG Datasheet Automotive-grade Trench Gate Field-stop IGBT

Manufacturer: STMicroelectronics

Overview: STGST200G65DFAG, STGST200G65DTAG Datasheet Automotive-grade trench gate field-stop IGBT 650 V, 200 A in a STPAK package.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

This device represents an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss are essential.

Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Key Features

  • 1 4 23 32 1 STPAK C(4) G(3) E(1, 2) NG3C4E12.
  • AEC-Q101 qualified.
  • VCE(sat) = 1.52 V (typ. ) @ IC = 200 A.
  • Positive VCE(sat) temperature coefficient.
  • Tight parameter distribution.
  • Low thermal resistance.
  • Very fast and soft recovery antiparallel diode.

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