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STGST200G65DTAG - Automotive-grade trench gate field-stop IGBT

Download the STGST200G65DTAG datasheet PDF (STGST200G65DFAG included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for automotive-grade trench gate field-stop igbt.

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

This device represents an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss are essential.

Features

  • 1 4 23 32 1 STPAK C(4) G(3) E(1, 2) NG3C4E12.
  • AEC-Q101 qualified.
  • VCE(sat) = 1.52 V (typ. ) @ IC = 200 A.
  • Positive VCE(sat) temperature coefficient.
  • Tight parameter distribution.
  • Low thermal resistance.
  • Very fast and soft recovery antiparallel diode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGST200G65DFAG-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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STGST200G65DFAG, STGST200G65DTAG Datasheet Automotive-grade trench gate field-stop IGBT 650 V, 200 A in a STPAK package 4 Features 1 4 23 32 1 STPAK C(4) G(3) E(1, 2) NG3C4E12 • AEC-Q101 qualified • VCE(sat) = 1.52 V (typ.) @ IC = 200 A • Positive VCE(sat) temperature coefficient • Tight parameter distribution • Low thermal resistance • Very fast and soft recovery antiparallel diode Applications • Main inverter (electric traction) Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. This device represents an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss are essential.
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