STGST200G65DTAG Overview
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. This device represents an optimum promise in performance to maximize the efficiency of inverter systems where low-loss are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
STGST200G65DTAG Key Features
- AEC-Q101 qualified
- VCE(sat) = 1.52 V (typ.) @ IC = 200 A
- Positive VCE(sat) temperature coefficient
- Tight parameter distribution
- Low thermal resistance
- Very fast and soft recovery antiparallel diode