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STGSH80HB65DAG - IGBT

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STMicroelectronics

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STGSH80HB65DAG IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – STGSH80HB65DAG

Datasheet Details

Part number	STGSH80HB65DAG
Manufacturer	STMicroelectronics
File Size	1.12 MB
Description	IGBT
Datasheet	STGSH80HB65DAG Datasheet
Additional preview pages of the STGSH80HB65DAG datasheet.

Product details

Description

This device combines two IGBTs and diodes in half-bridge topology mounted on a very compact and rugged easily surface-mounted package.

Features

AQG 324 qualified.
High-speed switching series.
Maximum junction temperature: TJ = 175 °C.
Low VCE(sat) = 1.7 V (typ. ) @ IC = 80 A.
Minimized tail current.
Tight parameter distribution.
Low thermal resistance thanks to DBC substrate.
Positive temperature VCE(sat) coefficient.
Soft and very fast recovery antiparallel diode.
Isolation rating of 3.4 kVrms/min.

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Published: Feb 18, 2023 |