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STGSH80HB65DAG Datasheet - STMicroelectronics

IGBT

STGSH80HB65DAG Features

* AQG 324 qualified

* High-speed switching series

* Maximum junction temperature: TJ = 175 °C

* Low VCE(sat) = 1.7 V (typ.) @ IC = 80 A

* Minimized tail current

* Tight parameter distribution

* Low thermal resistance thanks to DBC subst

STGSH80HB65DAG General Description

This device combines two IGBTs and diodes in half-bridge topology mounted on a very compact and rugged easily surface-mounted package. The device is part of the HB series IGBTs, which is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop for.

STGSH80HB65DAG Datasheet (1.12 MB)

Preview of STGSH80HB65DAG PDF

Datasheet Details

Part number:

STGSH80HB65DAG

Manufacturer:

STMicroelectronics ↗

File Size:

1.12 MB

Description:

Igbt.
7 9 9 7 1 6 7 9 6 1 ACEPACK SMIT 6 9 1 7 1 6 ACEPACK SMIT GADG031120220946SA 9 (DC+) T1 1 (G1) 2 (K1) T2 6 (G2) 5 (K2) D1 7 (U) D2 8 (DC-.

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STGSH80HB65DAG IGBT STMicroelectronics

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