STGST200G65DFAG Datasheet, STMicroelectronics

STGST200G65DFAG igbt equivalent, automotive-grade trench gate field-stop igbt.

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Features and benefits

1 4 23 32 1 STPAK C(4) G(3) E(1, 2) NG3C4E12
* AEC-Q101 qualified
* VCE(sat) = 1.52 V (typ.) @ IC = 200 A
* Positive VCE(sat) temperature coefficient.

Application

* EV Inverter Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop struc.

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STG1

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