STGST200G65DFAG Key Features
- AEC-Q101 qualified
- VCE(sat) = 1.52 V (typ.) @ IC = 200 A
- Positive VCE(sat) temperature coefficient
- Tight parameter distribution
- Low thermal resistance
- Very fast and soft recovery antiparallel diode
- Part: STGST200G65DFAG
- Description: Automotive-grade trench gate field-stop IGBT
- Manufacturer: STMicroelectronics
- Size: 770.75 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STGST200G65DTAG | Automotive-grade trench gate field-stop IGBT |
| STGSB200M65DF2AG | IGBT |
| STGSH80HB65DAG | IGBT |
| STG1 | N-channel Power MOSFET |
| STG1218 | a quad channel analog switch |