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STGW100H65FB2-4 Datasheet - STMicroelectronics

IGBT

STGW100H65FB2-4 Features

* Maximum junction temperature: TJ = 175 °C

* Low VCE(sat) = 1.55 V (typ.) @ IC = 100 A

* Minimized tail current

* Tight parameter distribution

* Low thermal resistance

* Positive VCE(sat) temperature coefficient

* Excellent switching performan

STGW100H65FB2-4 General Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. T.

STGW100H65FB2-4 Datasheet (249.19 KB)

Preview of STGW100H65FB2-4 PDF

Datasheet Details

Part number:

STGW100H65FB2-4

Manufacturer:

STMicroelectronics ↗

File Size:

249.19 KB

Description:

Igbt.
STGW100H65FB2-4 Datasheet Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 package TO247-4 2 34 1 C(1,TAB) G(4) K(3) .

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STGW100H65FB2-4 IGBT STMicroelectronics

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