STGW10M65DF2 Datasheet - STMicroelectronics

IGBT

STGW10M65DF2 General Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential..

STGW10M65DF2 Datasheet (776.41 KB)

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STGW10M65DF2

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STMicroelectronics ↗

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776.41 KB

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Igbt.
STGW10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low loss Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagr.

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STGW10M65DF2 General Description

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