STGW60H65DF Key Features
- High speed switching
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- 6 µs short-circuit withstand time
- Very fast soft recovery antiparallel diode
- Lead free package
- Part: STGW60H65DF
- Manufacturer: STMicroelectronics (official site)
- Size: 853.59 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STGW60H65DFB | Trench gate field-stop IGBT |
| STGW60H65DFB-4 | IGBT |
| STGW60H65DRF | field stop trench gate IGBT |
| STGW60H65F | 650 V field stop trench gate IGBT |
| STGW60H65FB | Trench gate field-stop IGBT |
STGW60H65DF Description
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a promise between conduction and switching losses, maximizing the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation.