STMicroelectronics STGW60H65DRF
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters.| Part No. | STGW60H65DRF |
|---|---|
| Datasheet | STGW60H65DRF Download |
| Manufacturer |  STMicroelectronics |
| Description | field stop trench gate IGBT |
| Buy | Stock & Price |
APPLICATIONS
● Photovoltaic inverters● Uninterruptible power supply
● Welding
● Power factor correction
● High switching frequency converters
DESCRIPTION
Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation.FEATURES
● Very high speed switching● Tight parameters distribution
● Safe paralleling
● Low thermal resistance
● 6 µs short-circuit withstand time
● Ultrafast soft recovery antiparallel diode Order code Table 1. Device summary Marking Package STGW60H65DRF GW60H65DRF TO-247 April 2013 This is information on a product in full production. DocID022346 Rev 6 Packaging Tube 1/13 13 Electrical ratings 1 Electrical ratings STGW60H65DRF Table 2. Absolute maximum ratings Symbol Parameter Value VCES Collector-emitter voltage (VGE = 0) 650 IC Continuous collector current at TC = 25 °C 120 IC ICP (1) Continuous collector current at TC = 100 °C Pulsed collector current 60 240 VGE Gate-emitter voltage ±20...
