Datasheet Summary
60 A, 650 V field stop trench gate IGBT with Ultrafast diode
3 2 1
TO-247
Figure 1. Internal schematic diagram
- production data
Applications
- Photovoltaic inverters
- Uninterruptible power supply
- Welding
- Power factor correction
- High switching frequency converters
Description
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a promise between conduction and switching losses, maximizing the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling...