STGW60H65DRF Datasheet Field Stop Trench Gate IGBT

Manufacturer: STMicroelectronics

Overview: STGW60H65DRF 60 A, 650 V field stop trench gate IGBT with Ultrafast diode 3 2 1 TO-247 Figure 1.

Datasheet Details

Part number	STGW60H65DRF
Manufacturer	STMicroelectronics
File Size	907.78 KB
Description	field stop trench gate IGBT
Datasheet	STGW60H65DRF-STMicroelectronics.pdf

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters.

Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation.

Very high speed switching.
Tight parameters distribution.
Safe paralleling.
Low thermal resistance.
6 µs short-circuit withstand time.
Ultrafast soft recovery antiparallel diode Order code Table 1. Device summary Marking Package STGW60H65DRF GW60H65DRF TO-247 April 2013 This is information on a product in full production. DocID022346 Rev 6 Packaging Tube 1/13 www. st. com 13 Electrical ratings 1 Electrical ratings STGW60H65DRF Table 2. Absolute maximu.