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STGW60H65DRF - field stop trench gate IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters.

Features

  • Very high speed switching.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • 6 µs short-circuit withstand time.
  • Ultrafast soft recovery antiparallel diode Order code Table 1. Device summary Marking Package STGW60H65DRF GW60H65DRF TO-247 April 2013 This is information on a product in full production. DocID022346 Rev 6 Packaging Tube 1/13 www. st. com 13 Electrical ratings 1 Electrical ratings STGW60H65DRF Table 2. Absolute maximu.

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STGW60H65DRF 60 A, 650 V field stop trench gate IGBT with Ultrafast diode 3 2 1 TO-247 Figure 1. Internal schematic diagram Datasheet - production data Applications  Photovoltaic inverters  Uninterruptible power supply  Welding  Power factor correction  High switching frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation.
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