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STGW60H65DFB - Trench gate field-stop IGBT

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STMicroelectronics

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STGW60H65DFB Trench gate field-stop IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – STGW60H65DFB

Datasheet Details

Part number	STGW60H65DFB
Manufacturer	STMicroelectronics
File Size	685.37 KB
Description	Trench gate field-stop IGBT
Datasheet	STGW60H65DFB Datasheet
Additional preview pages of the STGW60H65DFB datasheet.

Product details

Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

Features

Maximum junction temperature: TJ = 175 °C.
High speed switching series.
Minimized tail current.
Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 60 A.
Tight parameter distribution.
Safe paralleling.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Very fast soft recovery antiparallel diode.

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Published: Sep 6, 2017 |