Datasheet Summary
Trench gate field-stop 650 V, 60 A high speed HB series IGBT
TO247-4
2 34 1
C(1, TAB)
G(4) K(3)
Features
- Maximum junction temperature: TJ = 175 °C
- Excellent switching performance thanks to the extra driving kelvin pin
- Low VCE(sat) = 1.6 V (typ.) @ IC = 60 A
- Minimized tail current
- Tight parameter distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
Applications
- Photovoltaic inverters
- High-frequency converters
DescriptionE(2)
NG4K3E2C1_TAB
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which...