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STGW60H65DF Datasheet Field Stop Trench Gate IGBT

Manufacturer: STMicroelectronics

Overview: STGW60H65DF 60 A, 650 V field stop trench gate IGBT with very fast.

General Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters.

Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation.

Key Features

  • High speed switching.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • 6 µs short-circuit withstand time.
  • Very fast soft recovery antiparallel diode.
  • Lead free package.

STGW60H65DF Distributor

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