STMicroelectronics STGW60H65DF
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters.| Part No. | STGW60H65DF |
|---|---|
| Datasheet | STGW60H65DF Download |
| Manufacturer |  STMicroelectronics |
| Description | field stop trench gate IGBT |
| Buy | Stock & Price |
FEATURES
● High speed switching● Tight parameters distribution
● Safe paralleling
● Low thermal resistance
● 6 µs short-circuit withstand time
● Very fast soft recovery antiparallel diode
● Lead free package
APPLICATIONS
● Photovoltaic inverters● Uninterruptible power supply
● Welding
● Power factor correction
● High switching frequency converters
DESCRIPTION
Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. Datasheet − production data 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking STGW60H65DF GW6
