Datasheet Summary
60 A, 650 V field stop trench gate IGBT with very fast diode
Features
- High speed switching
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- 6 µs short-circuit withstand time
- Very fast soft recovery antiparallel diode
- Lead free package
Applications
- Photovoltaic inverters
- Uninterruptible power supply
- Welding
- Power factor correction
- High switching frequency converters
Description
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a promise between conduction and switching losses, maximizing the efficiency of high switching frequency converters....