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STGW60H65F - 650 V field stop trench gate IGBT

Description

Using advanced proprietary trench gate and field stop structure, this IGBT leads to an optimized compromise between conduction and switching losses maximizing the efficiency for high switching frequency converters.

Features

  • High speed switching Tight parameter distribution Safe paralleling Low thermal resistance 6 µs short-circuit withstand time Lead free package TO-247 2 1 3 1 3 2.

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Datasheet Details

Part number STGW60H65F
Manufacturer STMicroelectronics
File Size 1.49 MB
Description 650 V field stop trench gate IGBT
Datasheet download datasheet STGW60H65F Datasheet
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STGW60H65F STGWT60H65F 60 A, 650 V field stop trench gate IGBT Datasheet − production data Features ■ ■ ■ ■ ■ ■ High speed switching Tight parameter distribution Safe paralleling Low thermal resistance 6 µs short-circuit withstand time Lead free package TO-247 2 1 3 1 3 2 Applications ■ ■ ■ ■ ■ TO-3P Photovoltaic inverters Uninterruptible power supply Welding Power factor correction High switching frequency converters Figure 1. Internal schematic diagram Description Using advanced proprietary trench gate and field stop structure, this IGBT leads to an optimized compromise between conduction and switching losses maximizing the efficiency for high switching frequency converters.
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