• Part: STGW60H65F
  • Description: 650 V field stop trench gate IGBT
  • Manufacturer: STMicroelectronics
  • Size: 1.49 MB
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Datasheet Summary

STGW60H65F STGWT60H65F 60 A, 650 V field stop trench gate IGBT - production data Features - - - - - - High speed switching Tight parameter distribution Safe paralleling Low thermal resistance 6 µs short-circuit withstand time Lead free package TO-247 2 1 3 1 3 2 Applications - - - - - TO-3P Photovoltaic inverters Uninterruptible power supply Welding Power factor correction High switching frequency converters Figure 1. Internal schematic diagram Description Using advanced proprietary trench gate and field stop structure, this IGBT leads to an optimized promise between conduction and switching losses maximizing the efficiency for high switching frequency converters....