STGW60H65F Overview
Using advanced proprietary trench gate and field stop structure, this IGBT leads to an optimized promise between conduction and switching losses maximizing the efficiency for high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and a very tight parameter distribution result in an easier paralleling operation. Doc ID 019012 Rev 5 1/14 .st.
STGW60H65F Key Features
- High speed switching Tight parameter distribution Safe paralleling Low thermal resistance 6 µs short-circuit withstand t