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STGW60H65F Datasheet, STMicroelectronics

STGW60H65F igbt equivalent, 650 v field stop trench gate igbt.

STGW60H65F Avg. rating / M : 1.0 rating-18

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STGW60H65F Datasheet

Features and benefits


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* High speed switching Tight parameter distribution Safe paralleling Low thermal resistance 6 µs short-circuit withstand time Lead free.

Application


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* TO-3P Photovoltaic inverters Uninterruptible power supply Welding Power factor correctio.

Description

Using advanced proprietary trench gate and field stop structure, this IGBT leads to an optimized compromise between conduction and switching losses maximizing the efficiency for high switching frequency converters. Furthermore, a slightly positive VC.

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