STGWA50M65DF2 Datasheet - STMicroelectronics

IGBT

STGWA50M65DF2 Features

* Maximum junction temperature: TJ = 175 °C

* 6 μs of minimum short-circuit withstand time

* VCE(sat) = 1.65 V (typ.) @ IC = 50 A

* Tight parameter distribution

* Safer paralleling

* Positive VCE(sat) temperature coefficient

* Low thermal resis

STGWA50M65DF2 General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Further.

STGWA50M65DF2 Datasheet (315.74 KB)

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STGWA50M65DF2

Manufacturer:

STMicroelectronics ↗

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315.74 KB

Description:

Igbt.
TO-247 long leads C (2) G (1) Sc12850_no_tab E (3) STGWA50M65DF2 Datasheet Trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 l.

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STGWA50M65DF2 Features

STGWA50M65DF2 General Description

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