STMicroelectronics STGWA50IH65DF
The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft commutation. The result is a product specifically designed to maximize efficiency for any resonant and softswitching applications.| Part No. | STGWA50IH65DF |
|---|---|
| Datasheet | STGWA50IH65DF Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 50A soft switching IGBT |
| Buy | Stock & Price |
FEATURES
● Designed for soft-commutation only● Maximum junction temperature: TJ = 175 °C
● VCE(sat) = 1.5 V (typ.) @ IC = 50 A
● Minimized tail current
● Tight parameter distribution
● Low thermal resistance
● Low voltage drop freewheeling co-packaged diode
● Positive VCE(sat) temperature coefficient
APPLICATIONS
● Induction cooking● Resonant converter
● Microwave ovens
DESCRIPTION
A freewheeling diode with a low drop forward voltage is included. Product summary Order code STGWA50IH65DF Marking G50IH65DF Package TO-247 long leads Packing Tube DS11796 - Rev 4 - December 2024 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP(1) Pulsed collector current VGE Gate-emitter voltage Continuous forward current at TC = 25 °C IF Continuous forward current at TC =...
