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STGWA50IH65DF - Trench gate field-stop IGBT

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General Description

The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for softcommutation.

A freewheeling diode with a low drop forward voltage is included.

The result is a product specifically designed to maximize efficiency for any resonant and soft-switching applications.

Overview

STGWA50IH65DF Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 long leads package Datasheet - production.

Key Features

  • Designed for soft-commutation only.
  • Maximum junction temperature: TJ = 175 °C.
  • VCE(sat) = 1.5 V (typ. ) @ IC = 50 A.
  • Minimized tail current.
  • Tight parameter distribution.
  • Low thermal resistance.
  • Low voltage drop freewheeling co-packaged diode Figure 1: Internal schematic diagram C (2) G (1) Sc12850_no_tab E (3).

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