STMicroelectronics STGWA50M65DF2
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.| Part No. | STGWA50M65DF2 |
|---|---|
| Datasheet | STGWA50M65DF2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 50A low-loss IGBT |
| Buy | Stock & Price |
FEATURES
● Maximum junction temperature: TJ = 175 °C● 6 μs of minimum short-circuit withstand time
● VCE(sat) = 1.65 V (typ.) @ IC = 50 A
● Tight parameter distribution
● Safer paralleling
● Positive VCE(sat) temperature coefficient
● Low thermal resistance
● Soft- and fast-recovery antiparallel diode
APPLICATIONS
● Motor control● UPS
● PFC
● General purpose inverter
DESCRIPTION
Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status link STGWA50M65DF2 Product summary Order code STGWA50M65DF2 Marking G50M65DF2 Package TO-247 long leads Packing Tube DS11402 - Rev 4 - March 2023 For further information contact your local STMicroelectronics sales office. STGWA50M65DF2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC(1) Continuous collector current at TC = 100 °C ICP...
