Datasheet Details
| Part number | STGWA50M65DF2 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 315.74 KB |
| Description | IGBT |
| Datasheet |
 STGWA50M65DF2 Datasheet
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| Part number | STGWA50M65DF2 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 315.74 KB |
| Description | IGBT |
| Datasheet |
STGWA50M65DF2 Datasheet
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This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
TO-247 long leads C (2) G (1) Sc12850_no_tab E (3) STGWA50M65DF2 Datasheet Trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads.
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