STMicroelectronics STGWA50M65DF2AG
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.| Part No. | STGWA50M65DF2AG |
|---|---|
| Datasheet | STGWA50M65DF2AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade 650V 50A low-loss IGBT |
| Buy | Stock & Price |
FEATURES
TO-247 long leads Product status link STGWA50M65DF2AG● AEC-Q101 qualified
● Maximum junction temperature: TJ = 175 °C
● Low VCE(sat) = 1.7 V (typ.) @ IC = 50 A
● Minimized tail current
● Tight parameter distribution
● Safer paralleling
● Low thermal resistance
● Soft and very fast-recovery antiparallel diode
APPLICATIONS
● Automotive motor control● e-compressor
● Heating system
DESCRIPTION
Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product summary Order code STGWA50M65DF2AG Marking G50M65DF2AG Package TO-247 long leads Packing Tube DS14599 - Rev 4 - November 2024 For further information contact your local STMicroelectronics sales office. STGWA50M65DF2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP(1) Puls...
