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STGWA50M65DF2AG - Automotive-grade IGBT

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General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.

Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Overview

STGWA50M65DF2AG Datasheet Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads.

Key Features

  • TO-247 long leads Product status link STGWA50M65DF2AG.
  • AEC-Q101 qualified.
  • Maximum junction temperature: TJ = 175 °C.
  • Low VCE(sat) = 1.7 V (typ. ) @ IC = 50 A.
  • Minimized tail current.
  • Tight parameter distribution.
  • Safer paralleling.
  • Low thermal resistance.
  • Soft and very fast-recovery antiparallel diode.

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