STGWA50HP65FB2 Description
E(3) The newest IGBT 650 V HB2 series represents an evolution of the advanced NG1E3C2T proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT.
STGWA50HP65FB2 Key Features
- Maximum junction temperature : TJ = 175 °C
- Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A
- Co-packaged protection diode
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient