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STGWA50M65DF2AG - Automotive-grade IGBT

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STMicroelectronics

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STGWA50M65DF2AG Automotive-grade IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – STGWA50M65DF2AG

Datasheet Details

Part number	STGWA50M65DF2AG
Manufacturer	STMicroelectronics
File Size	657.55 KB
Description	Automotive-grade IGBT
Datasheet	STGWA50M65DF2AG Datasheet
Additional preview pages of the STGWA50M65DF2AG datasheet.

Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

TO-247 long leads Product status link STGWA50M65DF2AG.
AEC-Q101 qualified.
Maximum junction temperature: TJ = 175 °C.
Low VCE(sat) = 1.7 V (typ. ) @ IC = 50 A.
Minimized tail current.
Tight parameter distribution.
Safer paralleling.
Low thermal resistance.
Soft and very fast-recovery antiparallel diode.

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Published: Feb 17, 2024 |